By Hari Singh Nalwa, Foreword by Richard E. Smalley
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Additional resources for Encyclopedia of Nanoscience and Nanotechnology Volume 6
The simplicity and reliability of this process to fabricate the simple MOS capacitor provides a new way to fabricate other microelectronic or optoelectronic devices by traditional lithography and LbL, self-assembled building blocks. Figure 10(a) shows an SEM image of the (45-nm silica/PDDA)4 multilayer cross-section. The ﬁlm has a permanent thickness of 170 nm, leading to 43 nm for every bilayer close to the silica particle diameter. A ﬁlm mass from QCM and a ﬁlm thickness from SEM gives a density of the SiO2 /PDDA multilayers as = 1 43 ± 0 05 g/cm3 .
The Adsorbed Amount Mechanism The adsorbed amount between the dipping and the spinning methods is signiﬁcantly different . This is caused by different adsorption mechanisms. Fast elimination of water 31 Nanoassembly for Polymer Electronics in the spinning process signiﬁcantly increased the molar concentration of the polyelectrolyte solution during the short deposition time  and this increases in the polyelectroyte concentration yields of thick layers, despite the thin ﬁlm formation typically provided by the centrifugal force and air shear force [130–132].
Solution pH and ionic strength were adjusted to achieve optimal selective deposition of the polyelectrolyte ﬁlms. 8 for the weak polyelectrolytes. For the PDAC/PSS system, the addition of NaCl electrolyte causes partial screening of charges for the strong polyelectrolyte, resulting in thick, loopy ﬁlms and optimal selective adsorption onto the COOH regions. The polyelectrolyte is subsequently immersed in an aqueous colloidal suspension of bare SiO2 microspheres or functionalized polystyrene latex particles.